标题： 磷化镓在二氧化硅上的光子器件 显示英文标题

标题： Gallium phosphide-on-silicon dioxide photonic devices

摘要： 利用磷化镓制造集成光子电路需要一种强大且可扩展的工艺来制造GaP-on-insulator器件。 在这里我们展示了第一个在SiO$_2$上的GaP光子器件。 该工艺利用了GaP/Al$_x$Ga$_{1-x}$P/GaP异质结构直接晶圆键合到SiO$_2$-on-Si晶圆上，随后去除GaP衬底和Al$_x$Ga$_{1-x}$P停止层。 通过感应耦合等离子体反应离子刻蚀，在顶部的GaP器件层中图案化光子器件，如光栅耦合器、波导和环形谐振器。 所制造的光栅耦合器的峰值耦合效率高达4.8 dB。 环形谐振器观察到了光学质量因数为17000，以及二次和三次谐波产生。 由于GaP的大带隙在通信波长下提供了低双光子吸收，由本工作实现的GaP-on-insulator光子器件的高良率对于纳米光子学中的应用尤其有趣，其中高质因数或低模式体积可以产生高的电场强度。 大带隙还使在可见波长下工作的集成光子器件成为可能。 显示英文摘要

摘要： The development of integrated photonic circuits utilizing gallium phosphide requires a robust, scalable process for fabrication of GaP-on-insulator devices. Here we present the first GaP photonic devices on SiO$_2$. The process exploits direct wafer bonding of a GaP/Al$_x$Ga$_{1-x}$P/GaP heterostructure onto a SiO$_2$-on-Si wafer followed by removal of the GaP substrate and the Al$_x$Ga$_{1-x}$P stop layer. Photonic devices such as grating couplers, waveguides, and ring resonators are patterned by inductively coupled-plasma reactive-ion etching in the top GaP device layer. The peak coupling efficiency of the fabricated grating couplers is as high as 4.8 dB. Optical quality factors of 17000 as well as second- and third-harmonic generation are observed with the ring resonators. Because the large bandgap of GaP provides for low two-photon absorption at telecommunication wavelengths, the high-yield fabrication of GaP-on-insulator photonic devices enabled by this work is especially interesting for applications in nanophotonics, where high quality factors or low mode volumes can produce high electric field intensities. The large bandgap also enables integrated photonic devices operating at visible wavelengths.