标题： 掺杂硅量子点作为相干表面等离子体的源 显示英文标题

标题： Doped Silicon Quantum Dots as Sources of Coherent Surface Plasmons

摘要： 在本工作中，我们提出使用掺杂的硅量子点（SiQD）作为相干表面等离子体（SPASER）的源。 通过完整的量子力学处理方法，理论上研究了单个SiQD中产生spasing的可能性。 我们表明，只要等离子体模式的品质因数超过某个最小值，掺杂的SiQDs中就可以发生spasing。 该最小值取决于SiQDs的尺寸和掺杂浓度。 它可以用于设计作为SPASER的最优结构。 对品质因数的条件转换为对半径的条件，并且表明对于给定的局域表面等离子体（LSP）模式，半径应小于某个临界值。 该值仅取决于模式指数。 推导出了用于设计的必要关系，并且作为该方法可行性的示例，设计了一个适用于中红外的SPASER。 此外，我们提出了一种更适用的器件，即在石墨烯层顶部排列掺杂的SiQDs阵列。 将石墨烯的表面等离子体极化子（SPP）模式与SiQDs的LSP模式耦合，会导致高强度的超窄相干SPP光束的耦合输出，可用于实际可能的应用。 显示英文摘要

摘要： In the present work, we propose using doped Silicon Quantum Dot (SiQD) as a source of coherent surface plasmons (SPASER). The possibility of spasing in single SiQD is investigated theoretically utilizing full quantum mechanical treatment. We show that spasing can take place in doped SiQDs whenever Quality factor of a plasmon mode exceeds some minimum value. The minimum value depends on size and doping concentration of SiQDs. It can be used to design an optimum structure as SPASER in silicon technologies. The condition on Quality factor is translated to a condition for radius and it is shown that for a given Localized Surface Plasmon (LSP) mode, the radius should be less than some critical value. This value only depends on mode index. The required relations for design purposes are derived and, as an example of feasibility of the approach, a SPASER is designed for mid infrared. Moreover, we propose a more applicable device by arranging an array of doped SiQDs on top of a graphene layer. Coupling the Surface Plasmon Polariton (SPP) modes of graphene with LSP modes of SiQDs causes outcoupling of an intense ultra narrow beam of coherent SPPs to be used in real probable applications.