标题： 量子阱激光器中轻微掺杂的隧穿结的电子和光学性质的研究 显示英文标题

标题： Investigation of the Electronical and Optical Properties of Quantum Well Lasers with Slightly Doped Tunnel Junction

摘要： 我们实验研究和分析了基于GaAs的常规量子阱激光二极管以及轻微掺杂的隧道结量子阱激光二极管的电学和光学特性。 发现TJ LD表现出非线性的S形I-V特性。还发现内部量子效率分别为TJ LD的21%和常规LD的87.3%。 此外，与常规LD相比，发现由于激光动力学反映了电流动力学，TJ LD可以获得15 nm的宽带谱。 这些结果可能还会导致更多应用的实现。 显示英文摘要

摘要： We experimentally investigate and analyze the electrical and optical characteristics of GaAs-based conventional quantum well laser diodes and the quantum well laser diodes with slightly-doped tunnel junction. It was found that TJ LD show a nonlinear S-shape I-V characteristic.It was also found that the internal quantum efficiency measured by 21% and 87.3% for the TJ LD and the conventional LD, respectively. Furthermore, compared with the conventional LD, it was found that we could achieve 15 nm broadband spectrum from the TJ LD due to lasing dynamics reflects the current dynamics. The results may also lead to the realization of more applications.