标题： 栅极可调的单层MoS2忆阻器 显示英文标题

标题： Gate-tunable memristors from monolayer MoS2

摘要： 我们在此报告基于化学气相沉积（CVD）生长的单层MoS2的栅极可调忆阻器。 这些忆阻器以场效应几何结构制造，其通道由晶粒尺寸为3-5微米的多晶MoS2薄膜组成。 器件特性显示开关比高达500，单个状态下的电阻可通过三个数量级连续栅极可调。 电阻切换源于动态变化的阈值电压和肖特基势垒高度，其潜在的物理机制似乎涉及空位迁移和/或电荷捕获。 顶栅器件实现阈值电压的可逆调节，有望用于非易失性存储器或类脑架构。 显示英文摘要

摘要： We report here gate-tunable memristors based on monolayer MoS2 grown by chemical vapor deposition (CVD). These memristors are fabricated in a field-effect geometry with the channel consisting of polycrystalline MoS2 films with grain sizes of 3-5 um. The device characteristics show switching ratios up to 500, with the resistance in individual states being continuously gate-tunable by over three orders of magnitude. The resistive switching results from dynamically varying threshold voltage and Schottky barrier heights, whose underlying physical mechanism appears to be vacancy migration and/or charge trapping. Top-gated devices achieve reversible tuning of the threshold voltage, with potential utility in non-volatile memory or neuromorphic architectures.