标题： 铌掺杂的SrTiO3肖特基界面的电场驱动忆阻行为 显示英文标题

标题： Electric Field Driven Memristive Behavior at the Schottky Interface of Nb doped SrTiO3

摘要： 受人类大脑启发的计算需要由低功耗元件组成的大量并行架构，这些元件的内部状态可以被改变。 SrTiO3 是一种具有丰富电子特性的复杂氧化物；在这里，展示了在 Nb 掺杂的 SrTiO3 上的肖特基接触作为神经形态计算的忆阻器元件。 肖特基界面的电场以模拟方式改变这些器件的电导率，这对于模仿突触可塑性非常重要。 观察到了有希望的功耗和耐久性特性。 电阻状态被证明可以模拟大脑的遗忘过程。 提出了一种电荷捕获模型来解释切换行为。 显示英文摘要

摘要： Computing inspired by the human brain requires a massive parallel architecture of low-power consuming elements of which the internal state can be changed. SrTiO3 is a complex oxide that offers rich electronic properties; here Schottky contacts on Nb-doped SrTiO3 are demonstrated as memristive elements for neuromorphic computing. The electric field at the Schottky interface alters the conductivity of these devices in an analog fashion, which is important for mimicking synaptic plasticity. Promising power consumption and endurance characteristics are observed. The resistance states are shown to emulate the forgetting process of the brain. A charge trapping model is proposed to explain the switching behavior.