标题： 具有主动猝灭和主动复位的单片集成电路的高检测效率硅单光子探测器 显示英文标题

标题： High detection efficiency silicon single-photon detector with a monolithic integrated circuit of active quenching and active reset

摘要： 硅单光子探测器（SPDs）是在可见波长范围内检测单光子的关键器件。 光子探测效率（PDE）是硅SPDs最重要的参数之一，提高PDE对于许多应用来说是非常必要的。 在这里，我们提出了一种实用的方法，通过集成有主动淬灭和主动复位（AQAR）的单片集成电路来提高硅SPD的PDE。 AQAR集成电路专为具有高击穿电压（250-450 V）的厚硅单光子雪崩二极管（SPAD）设计，然后通过高电压0.35-$\mu$m双极CMOS-DMOS工艺制造。 AQAR集成电路实现了约68 V的最大转换电压，具有30 ns的淬灭时间和10 ns的复位时间，通过调节过量偏压到足够高的水平，可以轻松将PDE提升到上限。 通过使用AQAR集成电路，我们设计并表征了两个SPD，这些SPD的SPAD是从商用单光子计数模块（SPCMs）中拆卸下来的。 与原始的SPCMs相比，在785 nm波长下，PDE值分别从68.3%提高到73.7%和69.5%提高到75.1%，同时暗计数率和后脉冲概率有适度增加。 我们的方法可以有效提高需要硅SPD的实际应用性能。 显示英文摘要

摘要： Silicon single-photon detectors (SPDs) are key devices for detecting single photons in the visible wavelength range. Photon detection efficiency (PDE) is one of the most important parameters of silicon SPDs, and increasing PDE is highly required for many applications. Here, we present a practical approach to increase PDE of silicon SPD with a monolithic integrated circuit of active quenching and active reset (AQAR). The AQAR integrated circuit is specifically designed for thick silicon single-photon avalanche diode (SPAD) with high breakdown voltage (250-450 V), and then fabricated via the process of high-voltage 0.35-$\mu$m bipolarCMOS-DMOS. The AQAR integrated circuit implements the maximum transition voltage of ~ 68 V with 30 ns quenching time and 10 ns reset time, which can easily boost PDE to the upper limit by regulating the excess bias up to a high enough level. By using the AQAR integrated circuit, we design and characterize two SPDs with the SPADs disassembled from commercial products of single-photon counting modules (SPCMs). Compared with the original SPCMs, the PDE values are increased from 68.3% to 73.7% and 69.5% to 75.1% at 785 nm, respectively, with moderate increases of dark count rate and afterpulse probability. Our approach can effectively improve the performance of the practical applications requiring silicon SPDs.