标题： 双粒子紧束缚描述半导体纳米结构中的高次谐波产生 显示英文标题

标题： Two-Particle Tight-Binding Description of Higher-Harmonic Generation in Semiconductor Nanostructures

摘要： 我们开发了一种量子力学理论，用于描述半导体纳米结构的光学响应，特别强调高阶谐波生成。 基于紧束缚方法，我们考虑了所有两粒子相关性，从而描述了电子和空穴的产生、演化和湮灭。 在体材料的极限情况下，我们获得的精度与通过已建立的半导体布洛赫方程求解所达到的精度相同。 对于有限尺寸的半导体结构，我们还包含了周围的环境，从而能够描述电子的发射。 此外，我们还纳入了不同的弛豫机制，如带内电流的去相位和阻尼。 此外，我们描述的优势在于，从如从密度泛函理论计算中获得的紧束缚参数等极其精确的材料数据出发，我们得到的数值描述远比类似的从头算方法（例如基于时间依赖密度泛函理论的方法）更少计算挑战性和资源需求。 显示英文摘要

摘要： We develop a quantum mechanical theory to describe the optical response of semiconductor nanostructures with a particular emphasis on higher-order harmonic Generation. Based on a tight-binding approach we take all two-particle correlations into account thus describing the creation, evolution and annihilation of electron and holes. In the limiting case of bulk materials, we obtain the same precision as that achieved by solving the well-established semiconductor Bloch Equations. For semiconducting structures of finite extent, we also incorporate the surrounding space thus enabling a description of electron emission. In addition, we incorporate different relaxation mechanisms such as dephasing and damping of intraband currents. Moreover, the advantage of our description is that, starting from extremely precise material data as e.g., from tight-binding parameters obtained from density-functional-theory calculations, we obtain a numerical description being by far less computationally challenging and resource-demanding as comparable ab-initio approaches, e.g., those based on time-dependent density functional theory.