标题： 硅中100 eV核反冲电离产额的首次测量 显示英文标题

标题： First measurement of the nuclear-recoil ionization yield in silicon at 100 eV

摘要： 我们使用低温声子灵敏的克量子级探测器测量了硅中的核反冲电离产额。单能束流中的中子以对应于从 4 keV 到 100 eV 能量沉积的角度散射到硅核上，这是迄今为止探测到的最低能量。结果表明，在 100 eV 以上没有电离产生阈值的迹象。这些结果需要进一步研究电离产额理论，并全面确定 keV 能量以下探测器响应函数。 显示英文摘要

摘要： We measured the nuclear--recoil ionization yield in silicon with a cryogenic phonon-sensitive gram-scale detector. Neutrons from a mono-energetic beam scatter off of the silicon nuclei at angles corresponding to energy depositions from 4\,keV down to 100\,eV, the lowest energy probed so far. The results show no sign of an ionization production threshold above 100\,eV. These results call for further investigation of the ionization yield theory and a comprehensive determination of the detector response function at energies below the keV scale.