标题： 基于PMMA和热剥离胶带的干法转移用于二维TMDC层的异质集成 显示英文标题

标题： Dry Transfer Based on PMMA and Thermal Release Tape for Heterogeneous Integration of 2D-TMDC Layers

摘要： 一种可靠且可扩展的将二维过渡金属二硫属化物（2D-TMDCs）从生长基底转移到目标基底的方法，具有高可重复性和产率，是器件集成的关键步骤。 在本工作中，我们介绍了一种可扩展的干法转移方法，用于在蓝宝石上通过金属有机化学气相沉积（MOCVD）生长的2D-TMDCs。 使用聚甲基丙烯酸甲酯（PMMA）和热释放胶带（TRT）分别作为牺牲层和载体，将转移至硅/二氧化硅（Si/SiO$_2$）基底。 我们提出的方法确保了从生长基底的可重复剥离，并在溶剂中去除PMMA时更好地保留了二维TMDC，同时不影响其对目标基底的粘附性。 本文介绍的干法与基于氢氧化钾（KOH）溶液的标准湿法转移方法进行全面比较，结果表明干法转移层在清洁度和结构完整性方面有所提高，分别由X射线光电子能谱和拉曼光谱证实。 此外，制造的场效应晶体管（FETs）在亚阈值斜率、最大漏电流和器件间变异性方面表现出改进。 本工作中开发的干法转移方法实现了二维TMDC层在大面积上的可重复集成到（光）电子元件中，同时更好地保持了层的原生特性。 显示英文摘要

摘要： A reliable and scalable transfer of 2D-TMDCs (two-dimensional transition metal dichalcogenides) from the growth substrate to a target substrate with high reproducibility and yield is a crucial step for device integration. In this work, we have introduced a scalable dry-transfer approach for 2D-TMDCs grown by MOCVD (metal-organic chemical vapor deposition) on sapphire. Transfer to a silicon/silicon dioxide (Si/SiO$_2$) substrate is performed using PMMA (poly(methyl methacrylate)) and TRT (thermal release tape) as sacrificial layer and carrier, respectively. Our proposed method ensures a reproducible peel-off from the growth substrate and better preservation of the 2D-TMDC during PMMA removal in solvent, without compromising its adhesion to the target substrate. A comprehensive comparison between the dry method introduced in this work and a standard wet transfer based on potassium hydroxide (KOH) solution shows improvement in terms of cleanliness and structural integrity for dry-transferred layer, as evidenced by X-ray photoemission and Raman spectroscopy, respectively. Moreover, fabricated field-effect transistors (FETs) demonstrate improvements in subthreshold slope, maximum drain current and device-to-device variability. The dry-transfer method developed in this work enables large-area integration of 2D-TMDC layers into (opto)electronic components with high reproducibility, while better preserving the as-grown properties of the layers.