标题： 通过高功率脉冲磁控溅射技术制备的具有增强极化和低漏电的铁电AlScN薄膜 显示英文标题

标题： Ferroelectric AlScN thin films with enhanced polarization and low leakage enabled by high-power impulse magnetron sputtering

摘要： 高效数据处理的需求促使计算架构向内存内计算转变。铁电材料，特别是AlScN，在下一代存储设备中显示出巨大潜力。然而，由于高矫顽场、漏电流和稳定性有限等挑战，其广泛应用受到限制。我们的工作介绍了一种使用高功率脉冲磁控溅射（HiPIMS）合成铁电AlScN薄膜的新方法。通过组合研究，我们探讨了钪含量和基板偏压对使用金属离子同步（MIS）HiPIMS沉积的AlScN薄膜铁电性能的影响。利用HiPIMS的高电离率和优化的时间基板偏压电位，我们在低温下增强了原子的迁移率。我们的薄膜在低至250{\deg }C的温度下表现出高度的织构和结晶度以及低粗糙度。最重要的是，这些薄膜的矫顽场与最先进的值（5 MV/cm）相当，剩余极化显著增强（158-172.0 {\mu }C/cm2）。值得注意的是，剩余极化在不同钪浓度下保持稳定。我们进一步评估了循环稳定性和漏电流，以评估其在存储应用中的适用性。本研究展示了HiPIMS作为一种可扩展且与CMOS兼容的技术，用于合成高质量的铁电AlScN薄膜，为它们在非易失性存储应用中的应用铺平了道路。 显示英文摘要

摘要： The demand for efficient data processing motivates a shift toward in-memory computing architectures. Ferroelectric materials, particularly AlScN, show great promise for next-generation memory devices. However, their widespread application is limited due challenges such as high coercive fields, leakage currents and limited stability. Our work introduces a novel synthesis approach for ferroelectric AlScN thin films using high-power impulse magnetron sputtering (HiPIMS). Through a combinatorial study, we investigate the effect of scandium content and substrate bias on the ferroelectric properties of AlScN films deposited using metal-ion synchronized (MIS) HiPIMS. Leveraging the high ionization rates of HiPIMS and optimally timed substrate bias potentials, we enhance the adatom mobility at low temperatures. Our films exhibit a high degree of texture and crystallinity as well as low roughness at temperatures as low as 250{\deg}C. Most importantly, the films exhibit coercive fields comparable to state-of-the-art values (5 MV/cm) with significantly enhanced remanent polarization (158-172.0 {\mu}C/cm2). Notably, the remanent polarization remains stable across varying scandium concentrations. We further evaluate cycling stability and leakage current to assess suitability for memory applications. This study demonstrates HiPIMS as a scalable and CMOS compatible technique for synthesizing high-quality ferroelectric AlScN films, paving the way for their application in non-volatile memory applications.