标题： InSb/CdTe 异质结构界面增强热电子散射的局部检测 显示英文标题

标题： Local Detection of Enhanced Hot Electron Scattering in InSb/CdTe Heterostructure Interface

摘要： InSb/CdTe异质结结构，具有低有效质量和高电子迁移率，表现出界面能带弯曲，导致Rashba自旋-轨道耦合效应和非互易输运，这使其适用于在逻辑和存储领域有广泛应用的自旋电子器件。 然而，由III-V族和II-VI族半导体组成的InSb/CdTe复杂异质结界面容易发生互扩散。 因此，对InSb/CdTe异质结界面特性的表征和研究对于改善InSb/CdTe材料体系的生长及其在自旋电子学领域的应用至关重要。 在本研究中，一种称为扫描噪声显微镜的新颖扫描探针显微镜被用于可视化InSb/CdTe纳米器件中的热电子散射。 结果表明，近场信号来源于嵌入层异质结界面处带电离子对电子的库仑散射。 这种实空间、无损的异质结界面特性表征为提高异质结性能提供了新工具。 显示英文摘要

摘要： The InSb/CdTe heterojunction structure, characterized by low effective mass and high electron mobility, exhibits interfacial energy band bending, leading to the Rashba spin-orbit coupling effect and nonreciprocal transport, which makes its suitable for spintronic devices with broad applications in logic and storage fields. However, the complex heterojunction interfaces of InSb/CdTe, composed of group III-V and group II-VI semiconductors, are prone to interdiffusion. Therefore, characterization and study of the interfacial properties of InSb/CdTe heterojunctions are crucial for the growth improvement of the InSb/CdTe material system as well as its application in the field of spintronics. In this study, a novel scanning probe microscope, called a scanning noise microscope, was applied to visualize hot electron scattering in InSb/CdTe nano-devices. The results demonstrated that the near-field signal originates from the Coulomb scattering of charged ions on electrons at the interface of the embedded layer heterojunction. This real-space, nondestructive characterization of the heterojunction interface properties offers a new tool for enhancing the performance of heterojunctions.