标题： 全 C 和 L 波段可调谐掺铒集成激光器通过可扩展制造 显示英文标题

标题： Full C- and L-band tunable erbium-doped integrated lasers via scalable manufacturing

摘要： 铒（Er）离子是基于光纤的放大器和激光器的首选增益介质，与基于半导体的平台相比，它具有较长的激发态寿命、缓慢的增益弛豫、低放大非线性和噪声以及温度稳定性。 超低损耗氮化硅（Si$_3$N$_4$）光子集成电路的最新进展，结合离子注入，使得高性能片上铒放大器和激光器得以实现，其性能可与基于光纤的设备相媲美，支持紧凑的光子系统。 然而，这些结果受到用于紧密限制的Si$_3$N$_4$波导（700 nm高）的高（2 MeV）注入束能量的限制，这阻碍了掺铒光子集成电路的大规模制造。 在此，我们克服了这些限制，并展示了首个完全晶圆规模、适合代工生产的掺铒光子集成电路可调激光器。 使用200 nm厚的Si$_3$N$_4$波导，我们将离子束能量需求降低到500 keV以下，从而实现了使用工业300 mm离子注入机的高效晶圆规模注入。 我们展示了91 nm的激光波长调谐范围，覆盖几乎整个光通信C波段和L波段，光纤耦合输出功率达到36 mW，固有线宽为95 Hz。 铒离子的温度不敏感特性使得激光器在125$^{\circ}$C下仍能稳定运行，并且在室温下使用远程光纤泵浦，可以实现小于15 MHz漂移的连续工作超过6小时。 掺铒波导激光器的完全可扩展、低成本制造为相干通信、激光雷达、微波光子学、光学频率合成和自由空间通信领域的广泛应用打开了大门。 显示英文摘要

摘要： Erbium (Er) ions are the gain medium of choice for fiber-based amplifiers and lasers, offering a long excited-state lifetime, slow gain relaxation, low amplification nonlinearity and noise, and temperature stability compared to semiconductor-based platforms. Recent advances in ultra-low-loss silicon nitride (Si$_3$N$_4$) photonic integrated circuits, combined with ion implantation, have enabled the realization of high-power on-chip Er amplifiers and lasers with performance comparable to fiber-based counterparts, supporting compact photonic systems. Yet, these results are limited by the high (2 MeV) implantation beam energy required for tightly confined Si$_3$N$_4$ waveguides (700 nm height), preventing volume manufacturing of Er-doped photonic integrated circuits. Here, we overcome these limitations and demonstrate the first fully wafer-scale, foundry-compatible Er-doped photonic integrated circuit-based tunable lasers. Using 200 nm-thick Si$_3$N$_4$ waveguides, we reduce the ion beam energy requirement to below 500 keV, enabling efficient wafer-scale implantation with an industrial 300 mm ion implanter. We demonstrate a laser wavelength tuning range of 91 nm, covering nearly the entire optical C- and L-bands, with fiber-coupled output power reaching 36 mW and an intrinsic linewidth of 95 Hz. The temperature-insensitive properties of erbium ions allowed stable laser operation up to 125$^{\circ}$C and lasing with less than 15 MHz drift for over 6 hours at room temperature using a remote fiber pump. The fully scalable, low-cost fabrication of Er-doped waveguide lasers opens the door for widespread adoption in coherent communications, LiDAR, microwave photonics, optical frequency synthesis, and free-space communications.