标题： 基于氧化物干转移的单晶MoS$_2$的晶圆级集成用于柔性电子器件 显示英文标题

标题： Wafer-scale Integration of Single-Crystalline MoS$_2$ for Flexible Electronics Enabled by Oxide Dry-transfer

摘要： 通过化学气相沉积（CVD）在蓝宝石基底上生长的原子级薄、单晶过渡金属二硫属化物（TMDCs）表现出卓越的机械和电学性能，使其成为柔性电子器件的理想沟道材料。 然而，传统的湿法转移工艺在将这些材料集成到柔性基底时通常会引入表面污染，显著降低器件性能。 在这里，我们提出了一种使用高介电氧化物作为转移介质的晶圆级干法转移技术，实现了4英寸单晶MoS$_2$到柔性基底上的集成。 该方法避免了与聚合物或溶剂的接触，从而保留了MoS$_2$的本征电子特性。 因此，所制备的柔性场效应晶体管（FET）阵列表现出卓越的性能，迁移率高达117 cm$^2$/Vs，亚阈值摆幅为68.8 mV dec$^{-1}$，并且具有超高的电流开/关比$10^{12}$，其性能与在刚性基底上实现的相当。 利用出色的电学特性，我们展示了基于MoS$_2$的工作在亚阈值区的柔性反相器，实现了高达218的增益和超低功耗1.4皮瓦/$\mu$米。此外，我们将由有源矩阵MoS$_2$晶体管阵列驱动的柔性触觉传感系统集成到机械手上，实现了实时物体识别。 这些发现同时实现了高电学性能和灵活性，凸显了单晶TMDC基柔性电子器件在实际应用中的巨大潜力。 显示英文摘要

摘要： Atomically thin, single-crystalline transition metal dichalcogenides (TMDCs) grown via chemical vapor deposition (CVD) on sapphire substrates exhibit exceptional mechanical and electrical properties, positioning them as excellent channel materials for flexible electronics. However, conventional wet-transfer processes for integrating these materials onto flexible substrates often introduce surface contamination, significantly degrading device performance. Here, we present a wafer-scale dry-transfer technique using a high-dielectric oxide as the transfer medium, enabling the integration of 4-inch single-crystalline MoS$_2$ onto flexible substrates. This method eliminates contact with polymers or solvents, thus preserving the intrinsic electronic properties of MoS$_2$. As a result, the fabricated flexible field-effect transistor (FET) arrays exhibit remarkable performance, with a mobility of 117 cm$^2$/Vs, a subthreshold swing of 68.8 mV dec$^{-1}$, and an ultra-high current on/off ratio of $10^{12}$-values comparable to those achieved on rigid substrates. Leveraging the outstanding electrical characteristics, we demonstrated MoS$_2$-based flexible inverters operating in the subthreshold regime, achieving both a high gain of 218 and ultra-low power consumption of 1.4 pW/$\mu$m. Additionally, we integrated a flexible tactile sensing system driven by active-matrix MoS$_2$ FET arrays onto a robotic gripper, enabling real-time object identification. These findings demonstrate the simultaneous achievement of high electrical performance and flexibility, highlighting the immense potential of single-crystalline TMDC-based flexible electronics for real-world applications.