标题： V缺陷、漏电和随机合金波动对红光InGaN多量子阱LED中载流子输运的影响 显示英文标题

标题： The Influence of V-Defects, Leakage, and Random Alloy Fluctuations on the Carrier Transport in Red InGaN MQW LEDs

摘要： 基于氮化铟镓（InGaN）的红色发光二极管（LED）由于随着铟含量增加，辐射复合速率相对于非辐射复合速率减少，因此其内部量子效率（IQE）低于紫色、蓝色和绿色InGaN LED。此外，高铟含量InGaN量子阱与GaN量子势垒之间的较大极化和带阶障碍增加了正向电压。在蓝色和绿色LED中，随机合金涨落和V缺陷在降低正向电压方面起着关键作用。当存在V缺陷时，无论是自然产生的还是有意引入的，它们都会通过V缺陷侧壁为载流子注入多量子阱（MQWs）提供替代路径。这种注入机制解释了绿色LED的开启电压。然而，在InGaN红色LED中，这两种现象不像在蓝色和绿色LED中那样有效地降低正向电压，因此计算得到的正向电压显著高于测量值。此外，在红色LED的开启电压（\(V < \hbar\omega/e = 2.0 \, \text{V}\)）之前观察到电流。为了解决这个问题，我们在模型中引入了位错引起的尾态，表明通过这些态的漏电流可能在开启电压以下和开启电压处都起着重要作用。模拟还表明，开启电压以下的漏电流会积累，在量子阱中部分扩散，屏蔽低注入区域的极化诱导势垒，并进一步降低正向电压。尽管这些有益效应，位错引起的尾态的一个缺点是增强了位错线区域的非辐射复合。本研究对InGaN量子阱红色LED的器件注入物理进行了详细分析，并概述了潜在的优化策略。 显示英文摘要

摘要： Red InGaN-based light-emitting diodes (LEDs) exhibit lower internal quantum efficiencies (IQEs) than violet, blue, and green InGaN LEDs due to a reduction in radiative recombination rates relative to non-radiative recombination rates as the indium composition increases. Additionally, the larger polarization and band offset barriers between high indium content InGaN quantum wells and GaN quantum barriers increase the forward voltage. In blue and green LEDs, random alloy fluctuations and V-defects play a key role in reducing the forward voltage. When V-defects are present, either naturally or intentionally introduced, they create an alternative path for carrier injection into the MQWs through the V-defect sidewalls. This injection mechanism explains the turn-on voltages of green LEDs. However, in InGaN red LEDs, these two phenomena do not reduce the forward voltage as effectively as in blue and green LEDs, and consequently, the computed forward voltage remains significantly higher than the measured one. Furthermore, currents are observed at low voltages before the turn-on voltage (\(V < \hbar\omega/e = 2.0 \, \text{V}\)) of red LEDs. To address this, we introduce dislocation-induced tail states in the modeling, suggesting that leakage current through these states may play a significant role both below and at turn-on voltages. The simulation also indicates that leakage carriers below turn-on accumulate, partially diffuse in the QWs, screen the polarization-induced barrier in the low injection regime, and further reduce the forward voltage. Despite these beneficial effects, a drawback of dislocation-induced tail states is the enhanced nonradiative recombination in the dislocation line region. This study provides a detailed analysis of device injection physics in InGaN QW red LEDs and outlines potential optimization strategies.