标题： 碳纳米管/$β$- Ga$_2$O$_3$异质结PIN二极管 显示英文标题

标题： Carbon-Nanotube/$β$-Ga$_2$O$_3$ Heterojunction PIN Diodes

摘要： $\beta$-Ga$_2$O$_3$正因其优异的材料性能而受到关注，成为下一代高功率、高效率和高温电子器件的有前途的半导体。然而，诸如缺乏可行的p型掺杂等挑战阻碍了其全部潜力的发挥，尤其是在双极器件的开发中。本研究介绍了一种新型异质结二极管（HD），该二极管将p型碳纳米管（CNTs）与i/n型$\beta$-Ga$_2$O$_3$结合，以克服这些限制。 首次制备了 CNT/$\beta$-Ga$_2$O$_3$异质 p-n 结二极管。 与具有相同$\beta$-Ga$_2$O$_3$ 的外延层的传统肖特基势垒二极管（SBD）相比，CNT/$\beta$-Ga$_2$O$_3$ HD 显示出显著的改进，包括更高的整流比（$1.2 \times 10^{11}$），更大的开启电压（1.96 V），在高达 300 {\deg }C 的温度下的漏电流大幅减少，以及击穿电压增加了 26.7%。 值得注意的是，CNT/$\beta$-Ga$_2$O$_3$ HD表现出一个低的理想因子1.02，表明材料之间具有理想的界面。 这些结果突显了CNT/$\beta$-Ga$_2$O$_3$异质结在电子应用中的潜力，为基于$\beta$-Ga$_2$O$_3$的器件当前的限制提供了一个有前景的解决方案。 显示英文摘要

摘要： $\beta$-Ga$_2$O$_3$ is gaining attention as a promising semiconductor for next-generation high-power, high-efficiency, and high-temperature electronic devices, thanks to its exceptional material properties. However, challenges such as the lack of viable p-type doping have hindered its full potential, particularly in the development of ambipolar devices. This work introduces a novel heterojunction diode (HD) that combines p-type carbon nanotubes (CNTs) with i/n-type $\beta$-Ga$_2$O$_3$ to overcome these limitations. For the first time, a CNT/$\beta$-Ga$_2$O$_3$ hetero-p-n-junction diode is fabricated. Compared to a traditional Schottky barrier diode (SBD) with the same $\beta$-Ga$_2$O$_3$ epilayer, the CNT/$\beta$-Ga$_2$O$_3$ HD demonstrates significant improvements, including a higher rectifying ratio ($1.2 \times 10^{11}$), a larger turn-on voltage (1.96 V), a drastically reduced leakage current at temperatures up to 300 {\deg}C, and a 26.7% increase in breakdown voltage. Notably, the CNT/$\beta$-Ga$_2$O$_3$ HD exhibits a low ideality factor of 1.02, signifying an ideal interface between the materials. These results underline the potential of CNT/$\beta$-Ga$_2$O$_3$ heterojunctions for electronic applications, offering a promising solution to current limitations in $\beta$-Ga$_2$O$_3$-based devices.