标题： 通过范德帕乌测试结构的补偿LGAD优化 显示英文标题

标题： Compensated LGAD optimisation through van der Pauw test structures

摘要： 一种新的增益注入设计最近被引入，以提高低增益雪崩二极管（LGADs）在未来强子对撞机如FCC-hh中预期的极端通量下的抗辐射能力。 该设计利用了两种相反类型的掺杂注入的工程补偿，需要对其在辐照下的演变进行彻底分析。 为此，将初始测试结构的实验测量结果与Technology CAD仿真结果在辐照前后进行了比较。 从C-V特性方面的测量-仿真比较中，研究了在补偿LGADs中使用的高初始施主浓度（$>10^{16}$ at/cm$^3$）下的施主去除情况，以及施主共注入如何影响碳对减缓受主去除的有益效果。 此外，还实施了一种范德帕乌测试结构的创新应用，这种结构通常由代工厂用于监控工艺质量。 通过这些结构，通过对辐照下方块电阻的变化进行检查，估算了补偿LGADs中单个注入的掺杂去除情况。 显示英文摘要

摘要： A new gain implant design has recently been introduced to enhance the radiation resistance of low-gain avalanche diodes (LGADs) to the extreme fluences anticipated in future hadron colliders like FCC-hh. This design utilises an engineered compensation of two opposing types of doping implants, requiring a thorough analysis of their evolution due to irradiation. To this end, the experimental measurements of their initial test structures have been compared with Technology CAD simulations both before and after irradiation. From the measurement-simulation comparison regarding C-V characteristics, the donor removal at high initial donor concentrations ($>10^{16}$ at/cm$^3$) used in Compensated LGADs has been studied, along with how donor co-implantation influences the beneficial effect of carbon to slow acceptor removal. Furthermore, an innovative application of van der Pauw test structures, typically employed by foundries to monitor process quality, has been implemented. The doping removal of the single implants used in Compensated LGADs has been estimated by examining the variation in sheet resistance with irradiation through these structures.