标题： 通过界面改性增强 Ni$_{80}$Fe$_{20}$/MoS$_2$堆栈中的自旋泵浦和磁化动力学 显示英文标题

标题： Enhanced Spin Pumping and Magnetization dynamics in Ni$_{80}$Fe$_{20}$/MoS$_2$ stack via interface modification

摘要： 具有强自旋轨道耦合（SOC）的材料对于实现基于自旋轨道转矩（SOT）的磁性存储器件至关重要。过渡金属二硫属化物（TMDs）由于其固有的高SOC强度，成为此类应用的有前景候选者。在这项研究中，我们利用宽带铁磁共振（FMR）光谱，研究了单层二硫化钼（ML-MoS$_2$）和Ni$_{80}$Fe$_{20}$ （Py）薄膜界面处的自旋泵浦效应。FMR测量显示，与参考Py薄膜相比，ML-MoS$_2$/Py（Pt = 0 nm）界面的有效Gilbert阻尼因子显著增强，这归因于ML-MoS$_2$/Py界面处的自旋泵浦效应。为了进一步量化自旋泵浦效率，我们在ML-MoS$_2$/Py界面引入了高SOC铂（Pt）插入层，并系统地改变其厚度。这种方法使我们能够评估关键的自旋输运参数，包括有效Gilbert阻尼参数的增强、反映Py到ML-MoS$_2$转移自旋角动量的有效自旋混合电导以及有效自旋电流密度。 显示英文摘要

摘要： Materials with strong spin orbit coupling (SOC) are essential for realizing spin orbit torque (SOT) based magnetic memory devices. Transition metal dichalcogenides (TMDs) are promising candidates for such appli cations because of their inherently high SOC strength. In this study, we investigate the spin pumping effect at the interface between a monolayer of molybdenum disulfide (ML-MoS$_2$) and Ni$_{80}$Fe$_{20}$ (Py) thin films using broadband ferromagnetic resonance (FMR) spectroscopy. FMR measurements reveal a notable enhancement in the effective Gilbert damping factor for the ML-MoS$_2$/Py (Pt = 0 nm) interface compared to the reference Py thin films, attributed to spin pumping across the ML-MoS$_2$/Py interface. To further quantify spin pumping efficiency, we introduce a high SOC platinum (Pt) interlayer at the ML-MoS$_2$/Py interface and systematically vary its thickness. This allows us to evaluate key spin transport parameters, including the enhancement in the effective Gilbert damping parameter, the effective spin mixing conductance that reflects the transfer of spin angular momentum from Py to ML-MoS$_2$ and the effective spin current density.