标题： 飞秒激光写入的氮化镓上的含有明亮反聚束发射器的纳米消融结构 显示英文标题

标题： Femtosecond laser-written nano-ablations containing bright antibunched emitters on gallium nitride

摘要： 飞秒激光书写为制造提供了独特的功能，包括三维、多材料和亚衍射极限的图案化。 特别是，具有优异光学特性的激光书写量子发射器和光子器件的演示引起了关注。 最近，据报道氮化镓（GaN）可以容纳量子发射器，在紫外到电信范围内的零声子光致发光具有窄而明亮的特性。 然而，通过外延形成的发射器是随机定位的，直到现在，还无法在有序阵列中制造量子发射器。 在本文中，我们采用飞秒激光书写来创建亚衍射极限直径的纳米蚀刻，并使用快速热退火来激活共定位的稳定发射器。 这些发射器在室温下表现出兆赫兹反聚束发射，并在光谱上有一个尖锐的峰值。 我们的研究不仅提出了一种在GaN上高效激光书写的纳米制造方法，还为在GaN中确定性地创建量子发射器提供了一条有前景的途径，揭示了所涉及的基本机制。 显示英文摘要

摘要： Femtosecond laser-writing offers distinct capabilities for fabrication, including three-dimensional, multi-material, and sub-diffraction-limited patterning. In particular, demonstrations of laser-written quantum emitters and photonic devices with superior optical properties have attracted attention. Recently, gallium nitride (GaN) has been reported to host quantum emitters with narrow and bright zero-phonon photoluminescence from ultraviolet to telecom ranges. However, emitters formed during epitaxy are randomly positioned, and until now, it has not been possible to fabricate quantum emitters in ordered arrays. In this paper, we employ femtosecond laser writing to create nano-ablations with sub-diffraction-limited diameter, and use rapid thermal annealing to activate co-located stable emitters. The emitters show MHz antibunched emission with a sharp spectral peak at room temperature. Our study not only presents an efficient approach to laser-written nanofabrication on GaN but also offers a promising pathway for the deterministic creation of quantum emitters in GaN, shedding light on the underlying mechanisms involved.