标题： 低温下用于低光子和真空紫外检测的侧向非晶硒光电探测器的表征 显示英文标题

标题： Characterization of Lateral Amorphous Selenium Photodetectors for Low-Photon and VUV Detection at Cryogenic Temperatures

摘要： 非晶硒（a-Se）作为低温光电探测材料的性能通过一系列使用横向结构器件并在定制光学测试台上运行的实验进行评估。 这些研究调查了在接近雪崩条件的高电场下，a-Se探测器对低光子通量的响应，以及在宽动态范围内的光电导响应线性度，以及对窄带130 nm真空紫外（VUV）照射的直接检测。 在87 K时，匹配滤波分析显示，使用大约6800个入射401 nm光子即可实现可靠的一次性检测，效率大于或等于80%，曲线下面积（AUC）大于或等于0.85，考虑到几何约束后，场活性区域内的光子数约为3400个。 在低温温度下进行测量，使用从硅光电倍增管参考和表征的光学滤光片堆栈得出的校准光子通量。 使用掺碲的a-Se（a-SeTe）器件进行的额外实验探讨了材料在相同测试条件下的行为，并证明在低温下a-SeTe中可以实现雪崩。 结果表明，在横向a-Se结构中实现了可重复的低噪声操作、VUV灵敏度和场依赖增益行为，这是首次在低温下观察到横向结构的a-Se和a-SeTe器件中的雪崩倍增现象。 这些发现支持将横向结构的a-Se器件集成到下一代像素化液氩时间投影室（TPCs）中，这些设备需要可扩展的、适用于高场的光子检测系统。 显示英文摘要

摘要： The performance of amorphous selenium (a-Se) as a cryogenic photodetector material is evaluated through a series of experiments using laterally structured devices operated in a custom optical test stand. These studies investigate the response of a-Se detectors to low-photon fluxes at high electric fields near avalanche conditions, the linearity of the photoconductive response over a wide dynamic range and the direct detection of narrowband 130 nm vacuum ultraviolet (VUV) illumination. At 87 K, matched-filter analysis shows reliable single-shot detection with efficiencies greater than or equal to 80 percent and area under the curve (AUC) greater than or equal to 0.85 using as few as approximately 6800 incident 401 nm photons, corresponding to approximately 3400 photons within field-active regions after accounting for geometric constraints. Measurements are performed at cryogenic temperatures using calibrated photon fluxes derived from a silicon photomultiplier reference and a characterized optical filter stack. Additional experiments using a tellurium-doped a-Se (a-SeTe) device explore the material's behavior under identical test conditions and demonstrate that avalanche is achievable in a-SeTe at cryogenic temperatures. The results demonstrate reproducible low-noise operation, VUV sensitivity and field-dependent gain behavior in a lateral a-Se architecture, representing the first reported observation of avalanche multiplication in laterally structured a-Se and a-SeTe devices at cryogenic temperatures. These findings support the potential integration of laterally structured a-Se devices into next-generation pixelated liquid-argon time projection chambers (TPCs) requiring scalable, high-field-compatible photon detection systems.